H01L25/00- Assemblies consisting of a plurality of individual semiconductor or other solid state devices Multistep manufacturing processes thereof.H01L29/7393- Insulated gate bipolar mode transistors, i.e.able to continuously respond to applied control signals controlled by field-effect, e.g. able to continuously respond to applied control signals H01L29/72- Transistor-type devices, i.e.H01L29/68- Types of semiconductor device Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched.H01L29/66- Types of semiconductor device Multistep manufacturing processes therefor.PN junction depletion layer or carrier concentration layer Details of semiconductor bodies or of electrodes thereof Multistep manufacturing processes therefor H01L29/00- Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. H01L- SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10.Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Priority claimed from JP2084194 external-priority Application filed by Hitachi Ltd filed Critical Hitachi Ltd Priority to US08/902,332 priority Critical patent/US6144046A/en Application granted granted Critical Publication of US6144046A publication Critical patent/US6144046A/en Anticipated expiration legal-status Critical Status Expired - Lifetime legal-status Critical Current Links Original Assignee Hitachi Ltd Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US08/902,332 Inventor Koumei Hanaoka Naoki Sakurai Mutsuhiro Mori Current Assignee (The listed assignees may be inaccurate. Google Patents Power inverter having series connection of semiconductor devices each having an inverse parallel connection of an insulated gate bipolar transistor and a diodeÄownload PDF Info Publication number US6144046A US6144046A US08/902,332 US90233297A US6144046A US 6144046 A US6144046 A US 6144046A US 90233297 A US90233297 A US 90233297A US 6144046 A US6144046 A US 6144046A Authority US United States Prior art keywords area diode insulated gate bipolar transistor gate bipolar Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US6144046A - Power inverter having series connection of semiconductor devices each having an inverse parallel connection of an insulated gate bipolar transistor and a diode US6144046A - Power inverter having series connection of semiconductor devices each having an inverse parallel connection of an insulated gate bipolar transistor and a diode
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